METHOD AND APPARATUS FOR GROWTH OF SILICON CARBIDE SINGLE CRYSTAL

摘要

PURPOSE: A method and an apparatus for growth of silicon carbide single crystal is provided to steadily growing the SiC single crystal of the large diameter more than 3 inches by controlling the initial-last temperature difference at the lower part of crucible. CONSTITUTION: A method for growth of silicon carbide single crystal is as follows. The temperature difference(ΔTF-I) between the process initial stage and the process last stage at the crucible bottom is controlled by adjusting the growth pressure(PC) inside the crucible and the temperature difference(ΔTB-U) of top and bottom parts of crucible. An apparatus for growing the SiC single crystal includes a crucible, a reaction chamber(130) and a heating apparatus(140). The crucible is made up of a plurality of selectively attachable unit crucibles. The heating apparatus is equipped along the circumference of the reaction chamber. The heating apparatus can move up and down along the vertical direction of the crucible.