| 摘要 |
FIELD: physics. ^ SUBSTANCE: invention relates to semiconductor technology and can be used for electronic and chemical passivation of a gallium antimonide surface. To realise the method of making a nitride film, a heterostructure based on GaSb is obtained through epitaxial growth on an n-type GaSb substrate of a layer of solid solution of n-type GalnAsSb, lattice-matched with the substrate, and a layer of p-type GalnAsSb. A mesa-structure is then formed through photolithography and a nitride film is deposited on the lateral surface of the obtained mesa-structure. For this the mesa-structure is immersed in an alkaline aqueous solution of hydrazine N2H4 with concentration 10-20 mol/l, acid salt of hydrazine with concentration 6-9 mol/l and water soluble monosulphide with concentration 0.02-0.04 mol/l. ^ EFFECT: invention allows for obtaining multilayer nitride film, coherent with the lateral surface of the heterostructure with retention of microrelief of that surface. ^ 7 cl, 11 dwg, 3 ex |
