| 摘要 |
A semiconductor integrated circuit device, has a semiconductor substrate; and a first transistor of a first conductivity type and a second transistor of the first conductivity type, the transistors being connected in series between a first power supply line and a first substrate well provided on the semiconductor substrate, the semiconductor integrated circuit device further comprising a first transistor of a second conductivity type and a second transistor of the second conductivity type, the transistors being connected in series between the second power supply line and a second substrate well provided on the semiconductor substrate.
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