发明名称 Electrostatic discharge protection apparatus for semiconductor devices
摘要 The present invention provides several embodiments with layout patterns for ESD protection. An apparatus with a layout pattern may be configured to protect I/O pads or the power rail. The layout pattern may designed to increase the current paths for ESD stress currents. For example, more rings may be applied. The present invention also provides circuit embodiments for ESD protection. According to one embodiment, an ESD protection circuit comprising four parasitic BJTs may be configured to protect the I/O pads or the power rail. More BJTs or resistors may be used to increase the current paths for ESD stress currents. Several variations and modifications may be made by changing the doping profiles of the doped regions.
申请公布号 US7605431(B2) 申请公布日期 2009.10.20
申请号 US20060533569 申请日期 2006.09.20
申请人 HIMAX TECHNOLOGIES LIMITED 发明人 CHEN TUNG-YANG
分类号 H01L23/60 主分类号 H01L23/60
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