发明名称 SEMICONDUCTOR DEVICE
摘要 PURPOSE: A semiconductor device is provided to be manufactured as various types and to maintain voltage stably. CONSTITUTION: A semiconductor device includes the internal voltage reference production, the voltage selection, and the level shifting and NMOS transistor. The internal voltage reference production has the potential level scheduled based on the potential level of the reference voltage. The voltage selection outputs as the selection reference voltage to select the voltage of one in response to the voltage selective signal of each internal voltage reference. The level shifting shifts the activation level of the voltage selective signal to the level higher than the external power voltage. The NMOS transistor has the gate connected to the voltage selection signal stage. The NMOS transistor has the source end connected to the selection reference voltage terminal.
申请公布号 KR20090109229(A) 申请公布日期 2009.10.20
申请号 KR20080034571 申请日期 2008.04.15
申请人 HYNIX SEMICONDUCTOR INC. 发明人 LEE, DO YUN
分类号 G11C5/14;G11C11/4074 主分类号 G11C5/14
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