发明名称 |
Methods of forming MOSFETS using crystalline sacrificial structures |
摘要 |
A Metal-Oxide-Semiconductor Field-Effect-Transistor (MOSFET) can be formed by growing an epitaxial semiconductor layer on an upper surface of a sacrificial crystalline structure and on a substrate to form a buried sacrificial structure. The buried sacrificial structure can be removed to form a void in place of the buried sacrificial structure and a device isolation layer can be formed in the void.
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申请公布号 |
US7605025(B2) |
申请公布日期 |
2009.10.20 |
申请号 |
US20050050557 |
申请日期 |
2005.02.03 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KIM MIN-SANG;OH CHANG-WOO;KIM DONG-WON;YEO KYOUNG-HWAN;KIM SUNG-MIN |
分类号 |
H01L21/00;H01L21/336;C30B1/00;H01L21/76;H01L29/06 |
主分类号 |
H01L21/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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