发明名称 |
Nonvolatile memory devices |
摘要 |
Methods of fabricating nonvolatile memory devices are provided. An isolation layer is formed on a substrate. The substrate has a memory region and a well contact region and the isolation layer defines an active region of the substrate. A gate insulating layer is formed on the active region. The gate insulating layer is patterned to define an opening therein. The opening exposes at least a portion of the well contact region of the substrate and acts as a charge pathway for charges generated during a subsequent etch of the isolation layer. Related memory device are also provided.
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申请公布号 |
US7605473(B2) |
申请公布日期 |
2009.10.20 |
申请号 |
US20060403964 |
申请日期 |
2006.04.13 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
CHOI JUNG-DAL;SHIN YUN-SEUNG;SEL JONG-SUN |
分类号 |
H01L21/336 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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