| 摘要 |
There is provided a semiconductor laser device capable of reducing stress occurring to a semiconductor laser element so that a life of the semiconductor laser device can be prolonged. In this semiconductor laser device, a solder layer 114 is absent over a first region R1 ranging to a specified length L1 in a perpendicular direction X from a center line J1 of a light-emitting region 150 toward both sides of the perpendicular direction X. That is, the first region R1 over which the light-emitting region 150 is present serves as an incomplete bonding region between the solder layer 114 of the semiconductor laser element 100 and a heat sink 200. Thus, stress given to the light-emitting region 150 due to differences in coefficient of thermal expansion among the semiconductor laser element 100, the solder layer 114 and the heat sink 200 during operation is reduced.
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