发明名称 |
Field effect transistors and methods for fabricating the same |
摘要 |
Field effect transistors and methods for fabricating field effect transistors are provided. A method, in accordance with an exemplary embodiment of the invention, comprises forming a polycrystalline silicon gate electrode overlying a silicon substrate. The gate electrode has two parallel sidewalls. Two sidewall spacers are fabricated overlying the silicon substrate. Each of the two sidewall spacers has a sidewall that is adjacent to one of the two parallel sidewalls of the gate electrode. A portion of the gate electrode between the two sidewall spacers is removed.
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申请公布号 |
US7605045(B2) |
申请公布日期 |
2009.10.20 |
申请号 |
US20060457300 |
申请日期 |
2006.07.13 |
申请人 |
ADVANCED MICRO DEVICES, INC. |
发明人 |
PEIDOUS IGOR;PRESS PATRICK;STEPHAN ROLF |
分类号 |
H01L21/336 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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