| 发明名称 |
Method of manufacturing an electronic device |
| 摘要 |
A method of manufacturing an electronic device is provided wherein an interconnect is made using 193 nm lithography. No deformation of the desired linewidth takes place in that during a plasma gas is used which dissociates in low-weight ions. The electronic device is particularly an integrated circuit.
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| 申请公布号 |
US7605089(B2) |
申请公布日期 |
2009.10.20 |
| 申请号 |
US20050557098 |
申请日期 |
2005.11.16 |
| 申请人 |
NXP B.V. |
发明人 |
FURUKAWA YUKIKO;WOLTERS ROBERTUS ADRIANUS MARIA |
| 分类号 |
H01L21/302;G03F7/36;G03F7/40;H01L21/311;H01L21/768 |
主分类号 |
H01L21/302 |
| 代理机构 |
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