发明名称 |
Metal-insulator-metal capacitor and method for fabricating the same |
摘要 |
A metal-insulator-metal (MIM) capacitor that includes a silicon nitride (SiN) dielectric film is disclosed. The MIM capacitor includes a bottom electrode, a top electrode and a dielectric layer positioned between the bottom electrode and the top electrode. The dielectric layer includes a silicon nitride film that has a plurality of silicon-hydrogen bonds and a plurality of nitride-hydrogen bonds. A ratio of silicon-hydrogen bonds to nitride-hydrogen bonds is equal to or smaller than 0.5. Accordingly, the nitrogen-rich and compressive silicon nitride film can improve the breakdown voltage of the MIM capacitor.
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申请公布号 |
US7606021(B2) |
申请公布日期 |
2009.10.20 |
申请号 |
US20070678628 |
申请日期 |
2007.02.26 |
申请人 |
UNITED MICROELECTRONICS CORP. |
发明人 |
SHIH LIAN-HUA;WU YI-CHING;CHEN JIANN-FU;CHEN MING-TE;CHENG CHIN-JEN |
分类号 |
H01G4/06 |
主分类号 |
H01G4/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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