| 摘要 |
A semiconductor memory device controlling an output voltage level of a high voltage generator in response to a variation of temperature has a high voltage generator that provides a high voltage higher than a power source voltage through an output terminal, generates a temperature detection signal obtained by sensing a variation of a diode current based on a temperature variation, and adjusts a voltage level of the output terminal in response to the temperature detection signal. The device is able to automatically control an output voltage or current of the high voltage generator.
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