Semiconductor substrate manufacturing method and semiconductor device manufacturing method, and semiconductor substrate and semiconductor device manufactured by the methods,申请号US20040513507-传众专利搜索

发明名称	Semiconductor substrate manufacturing method and semiconductor device manufacturing method, and semiconductor substrate and semiconductor device manufactured by the methods
摘要	The present invention relates to a method of manufacturing a semiconductor substrate, which enables a semiconductor device to have high speed operating characteristics and high performance characteristics such as lower electrical power consumption, and a method of manufacturing a semiconductor device including a method of manufacturing the semiconductor substrate thereof in a process, as well as to a semiconductor substrate manufactured by the method of manufacturing the same and a semiconductor device manufactured using the semiconductor substrate.
申请公布号	US7605443(B2)	申请公布日期	2009.10.20
申请号	US20040513507	申请日期	2004.11.05
申请人	NEC CORPORATION	发明人	OGURA ATSUSHI
分类号	H01L21/76;H01L21/764;H01L21/02;H01L21/265;H01L21/336;H01L21/762;H01L21/8242;H01L27/12;H01L29/78;H01L29/786	主分类号	H01L21/76
代理机构		代理人
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