METHOD FOR CONTROLING THIN FILM FORMING VELOCITY, THIN FILM FORMING METHOD HAVING THE METHOD AND THIN FILM FORMING SYSTEM FOR PERFORMING THE THIN FILM FORMING METHOD

摘要

PURPOSE: A method for controlling thin film forming velocity is provided to reduce the time for changing the deposition rate to the target speed. CONSTITUTION: The method for controlling thin film forming velocity comprises as follows. The deposition rate at the target substrate(110) is measured by detecting the gas of the deposition source generated from the evaporation source part. The distance between the target substrate and the evaporation source part(200) are controlled to reach the deposition rate to the set-up deposition rate. The deposition rate for depositing the deposition source on the target substrate is controlled by changing a distance between the target substrate and the evaporation source part.