DILUTE MAGNETIC SEMICONDUTOR AND FABRICATION MEHTOD OF THE SAME
摘要
PURPOSE: A dilute magnetic semiconductor is provided to increase the non-surface area by making TiO2 power in which the transition metal is doped through the hydrothermal synthesis method with the titanate nanotube. CONSTITUTION: A dilute magnetic semiconductor is the nanotube consisting of the hydrogen titanate in which the transition metal is doped. The transition metal is the selected one from the group consisting of Ni, and Co and Fe element. In the room temperature, the dilute magnetic semiconductor has the curie temperature in a temperature less than 400K and has ferromagnetism.
申请公布号
KR20090109239(A)
申请公布日期
2009.10.20
申请号
KR20080034583
申请日期
2008.04.15
申请人
IUCF-HYU (INDUSTRY-UNIVERSITY COOPERATION FOUNDATION HANYANG UNIVERSITY)
发明人
LEE, KYUNG SUB;SHIN, DONG WOOK;KIM, SUN JAE;KIM, DONG HYUN;GOO, NAM HOON;JEONG, YI HEON;LEE, BO RA