发明名称 OPTICAL PROXIMITY CORRECTION METHOD
摘要 <p>PURPOSE: An optical proximity correction method is provided to enhance the OPC accuracy without the TAT increment when performing the AOPC. CONSTITUTION: An optical proximity correction method is as follows. The development inspection duty critical dimension per pitch of mask pattern is extracted(S1). The magnitude of compensation of the mask pattern critical dimension according to the diffraction intensity difference of the thick mask and the thin mask is determined. The thin mask model is corrected(S3). The optical model and the resist model are set using the corrected thin mask model(S4). The AOPC(Auto Optical Proximity Correction) is performed using the optical model and the resist model(S5).</p>
申请公布号 KR20090109349(A) 申请公布日期 2009.10.20
申请号 KR20080034760 申请日期 2008.04.15
申请人 HYNIX SEMICONDUCTOR INC. 发明人 LEE, DONG JIN
分类号 H01L21/027 主分类号 H01L21/027
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