发明名称 |
Bi-directional MOSFET power switch with single metal layer |
摘要 |
A bi-directional power switch is formed as a monolithic semiconductor device. The power switch has two MOSFETs formed with separate source contacts to the external package and a common drain. The MOSFETs have first and second channel regions formed over a well region above a substrate. A first source is formed in the first channel. A first metal makes electrical contact to the first source. A first gate region is formed over the first channel. A second source region is formed in the second channel. A second metal makes electrical contact to the second source. A second gate region is formed over the second channel. A common drain region is disposed between the first and second gate regions. A local oxidation on silicon region and field implant are formed over the common drain region. The metal contacts are formed in the same plane as a single metal layer.
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申请公布号 |
US7605435(B2) |
申请公布日期 |
2009.10.20 |
申请号 |
US20070773187 |
申请日期 |
2007.07.03 |
申请人 |
GREAT WALL SEMICONDUCTOR CORPORATION |
发明人 |
ANDERSON SAMUEL J.;OKADA DAVID N. |
分类号 |
H01L29/76;H01L29/06;H01L29/417;H01L29/423;H01L29/74;H01L29/94;H01L31/062;H01L31/111;H01L31/113;H01L31/119;H01L47/02 |
主分类号 |
H01L29/76 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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