发明名称 WAFER PROCESSING APPARATUS
摘要 <p>A coating/developing apparatus for forming a resist film on a wafer such as a semiconductor wafer, exposing the wafer by means of an exposure system, and developing the exposed wafer. The time from the unloading of a wafer from the exposure system to the start of heating by a heating unit (PEB) is constant wafer by wafer. The stagnation of exposed wafers at an interface unit interposed between the region where a resist coating/developing is performed and the exposure system. Provided in the resist coating/developing region is first transfer means for carrying out one transfer cycle by transferring wafers each from one module to another on the downstream side of the wafer process flow and carrying out next transfer cycle. The number n of heating units (PEB) is, for example, five. The exposed wafer loaded in one of the heating units (PEB) is unloaded by the first transfer means after (n-1) cycles including the then transfer cycle carried out by the first transfer means.</p>
申请公布号 KR20090109137(A) 申请公布日期 2009.10.19
申请号 KR20097019977 申请日期 2003.11.18
申请人 发明人
分类号 H01L21/027;G03F7/16;G03F7/30;H01L21/00 主分类号 H01L21/027
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