MULTI-BIT FLASH MEMORY DEVICE, FLASH MEMORY, AND APPARATUS AND METHOD FOR DRIVING THE FLASH MEMORY DEVICE

摘要

PURPOSE: A multi-bit flash memory device is provided to increase the holding time of the electric charge by storing the charges in the charge trapping layer consisting of the silicon nitride. CONSTITUTION: A multi-bit flash memory device(100) includes a silicon substrate(110), a pin channel(120), the first insulation layer(130), dielectric layers(140,150), the second insulation layers(160,170), and gates(180,190). The pin channel has the shape that is a long queue. The both sides of pin channel are formed to be orthogonal to the silicon substrate. The end parts of pin channel are driven as a source(122) and a drain(124). The first insulation layer is formed on the silicon substrate to adjoin with the side of the channel. The dielectric layers are formed to be located from each other to the longitudinal direction of the pin channel. The second insulation layers are formed to cover the top of each dielectric layer and the pin channel. The gates are formed to surround the dielectric layer and the second insulation layer.