发明名称 DELAY CIRCUIT AND SEMICONDUCTOR MEMORY DEVICE INCLUDING THE SAME
摘要 PURPOSE: A delay circuit and semiconductor memory device including the same are provided to maintain the constant delay-value though process conditions changes. CONSTITUTION: The delay circuit and semiconductor memory device includes a logic gate, and a capacitor and mirroring. The input signal passes the logic gate. The capacitor is charged and discharged at the output terminal of the logic gate and delays the input signal. The mirroring maintains the current amount of the logic gate by mirroring of the current of electrostatic current source. The mirroring supplies the current which is proportional to the current of the electrostatic current source by the logic gate.
申请公布号 KR20090108753(A) 申请公布日期 2009.10.19
申请号 KR20080034011 申请日期 2008.04.14
申请人 HYNIX SEMICONDUCTOR INC. 发明人 RHO, KWANG MYOUNG
分类号 G11C8/00;G11C5/14;G11C7/06;G11C7/12 主分类号 G11C8/00
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