| 摘要 |
PROBLEM TO BE SOLVED: To provide a resistive element where the temperature coefficient and sheet resistance value can be adjusted independently. SOLUTION: By forming a first polycrystalline semiconductor film 3 on a semiconductor substrate 1 and ion-implanting an inert element in a region to the middle of a film thickness from the surface, the region is changed into an amorphous semiconductor film 3A. Then, by ion-implanting carrier impurities into the amorphous semiconductor film 3A and then performing heat treatment, the amorphous semiconductor film 3A is polycrystallized, thus forming a second polycrystalline semiconductor film 4. As a result, the average grain size of the second polycrystalline semiconductor film 4 is increased, as compared with that of the first polycrystalline semiconductor film 3. COPYRIGHT: (C)2010,JPO&INPIT
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