发明名称 Quantum dot solar cell with quantum dot bandgap gradients
摘要 Efficient photovoltaic devices with quantum dots are provided. Quantum dots have numerous desirable properties that can be used in solar cells, including an easily selected bandgap and Fermi level. In particular, the size and composition of a quantum dot can determine its bandgap and Fermi level. By precise deposition of quantum dots in the active layer of a solar cell, bandgap gradients can be present for efficient sunlight absorption, exciton dissociation, and charge transport. Mismatching Fermi levels are also present between adjacent quantum dots, allowing for built-in electric fields to form and aid in charge transport and the prevention of exciton recombination.
申请公布号 US2009255580(A1) 申请公布日期 2009.10.15
申请号 US20090383584 申请日期 2009.03.24
申请人 DASGUPTA NEIL;PRINZ FRIEDRICH B;HOLME TIMOTHY P;MACK JAMES F 发明人 DASGUPTA NEIL;PRINZ FRIEDRICH B.;HOLME TIMOTHY P.;MACK JAMES F.
分类号 H01L31/0216 主分类号 H01L31/0216
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