发明名称 |
Method for Improving the Reliability of Low-k Dielectric Materials |
摘要 |
A method for forming an integrated circuit structure includes providing a semiconductor substrate; forming a low-k dielectric layer over the semiconductor substrate; generating hydrogen radicals using a remote plasma method; performing a first hydrogen radical treatment to the low-k dielectric layer using the hydrogen radicals; forming an opening in the low-k dielectric layer; filling the opening with a conductive material; and performing a planarization to remove excess conductive material on the low-k dielectric layer.
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申请公布号 |
US2009258487(A1) |
申请公布日期 |
2009.10.15 |
申请号 |
US20080102695 |
申请日期 |
2008.04.14 |
申请人 |
LIN KENG-CHU;CHOU CHIA-CHENG;KO CHUNG-CHI;HSIEH CHING-HUA;HUANG CHENG-LIN;JENG SHWANG-MING |
发明人 |
LIN KENG-CHU;CHOU CHIA-CHENG;KO CHUNG-CHI;HSIEH CHING-HUA;HUANG CHENG-LIN;JENG SHWANG-MING |
分类号 |
H01L21/4763 |
主分类号 |
H01L21/4763 |
代理机构 |
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代理人 |
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