METHOD OF FABRICATING AG-DOPED TE-BASED NANO-MATERIAL AND MEMORY DEVICE USING THE SAME

摘要

A nano-ionic memory device is provided. The memory device includes a substrate, a chemically inactive lower electrode provided on the substrate, a solid electrolyte layer provided on the lower electrode and including a silver (Ag)-doped telluride (Te)-based nano-material, and an oxidizable upper electrode provided on the electrolyte layer.