METHOD OF FABRICATING A SEMICONDUCTOR DEVICE

摘要

PURPOSE: A manufacturing method of a semiconductor device is provided to reduce an electrical short between a landing pass and a recess contact plug in an integrated semiconductor device by increasing a separation distance between the landing pass and the recess contact plug. CONSTITUTION: Gate lines(108) are formed on a semiconductor substrate(101). An interlayer insulation film(110,128) insulates the gate lines. A first contact plug(114) and a second contact plug penetrate the interlayer insulation film, and are formed on the semiconductor substrate between the gate lines. A landing pad(122) is formed on the interlayer insulation film and the first contact plug, and is overlapped with a part of the first contact plug. A recess contact plug(126) is formed by etching the second contact plug.