发明名称 DEFECT CORRECTION METHOD FOR PHOTOMASK, MANUFACTURING METHOD OF PHOTOMASK, AND PATTERN TRANSFER METHOD
摘要 <p><P>PROBLEM TO BE SOLVED: To provide a defect correction method for photomasks which is capable of suppressing void of a light transflective part. <P>SOLUTION: In the defect correction method for a photomask which has a mask pattern having a light shielding part, a light-transmissive part, and a light transflective part on a transparent substrate, the photomask is manufactured through steps of: forming a first resist pattern on the light transflective film and the light shielding film formed in order on the transparent substrate, forming a light shielding pattern by etching the light shielding film in a light-transmissive part area with the first resist pattern as a mask, etching the light transflective film with the light shielding film pattern as a mask, forming a second resist pattern, and etching the light shielding film in a light transflective part area with the second resist pattern as a mask. Inspection for defects is performed after the step of forming the light shielding film pattern with the first resist pattern as the mask, and a correction film made of a material which tolerates an etching environment of the light transflective film and is etchable in an etching environment of the light shielding film is formed over at least a void part occurring in an area which will finally become a light transflective part. <P>COPYRIGHT: (C)2010,JPO&INPIT</p>
申请公布号 JP2009237491(A) 申请公布日期 2009.10.15
申请号 JP20080086750 申请日期 2008.03.28
申请人 HOYA CORP 发明人 SANO MICHIAKI
分类号 G03F1/72 主分类号 G03F1/72
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