| 摘要 |
PROBLEM TO BE SOLVED: To provide a large diameter GaN-based semiconductor substrate with little threading dislocation, and to provide method of manufacturing the same. SOLUTION: A GaN template substrate 10 includes a ZnO single crystal substrate 11, a protective film 12 formed on the backside 11a and the side surface 11b of the substrate 11, an interface layer 13 formed on the surface 11c of the ZnO single crystal substrate 11, an InGaN layer 14 which is formed on the interface layer and lattice-matched with the ZnO single crystal substrate 11, and a GaN layer 15 as thick as severalμm formed on the InGaN layer. The GaN layer 15 is grown to overlie an InGaN/ZnO compound substrate having the InGaN layer 14 which is grown while lattice matching with the ZnO single crystal substrate 11 having a small dislocation density, thereby the threading dislocation of the GaN layer 15 is reduced sharply. When the GaN layer 15 is grown, the protective film 12 prevents the ZnO single crystal substrate 11 from being destroyed by ammonia, and mixing of Zn or O to the InGaN layer or the GaN layer can be controlled. COPYRIGHT: (C)2010,JPO&INPIT
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