| 摘要 |
PROBLEM TO BE SOLVED: To form a good interface between a III-V compound semiconductor and an oxide layer by a practically simple method. SOLUTION: A semiconductor substrate is provided, which includes a first III-V compound semiconductor layer lattice-matching or pseudo-lattice-matching InP and not containing arsenic, and a second semiconductor layer which is formed in contact with the first semiconductor layer, includes a III-V compound semiconductor layer lattice-matching or pseudo-lattice-matching InP and can be selectively oxidized with the first semiconductor layer. In addition, a semiconductor device is provided, which includes a first III-V compound semiconductor layer lattice-matching or pseudo-lattice-matching InP and not containing arsenic, an oxide layer which is formed in contact with the first semiconductor layer and formed by selectively oxidizing at least part of a second III-V compound semiconductor layer lattice-matching or pseudo-lattice-matching InP, and a control electrode for applying an electric field to a channel formed on the first semiconductor layer. COPYRIGHT: (C)2010,JPO&INPIT
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