HIGH ASPECT RATIO OPENINGS

摘要

A capacitor forming method includes forming an electrically conductive support material over a substrate, with the support material containing at least 25 at% carbon. The method includes forming an opening through at least the support material where the opening has an aspect ratio of at least 20: 1 within a thickness of the support material. After forming the opening, the method includes processing the support material to effect a reduction in conductivity, and forming a capacitor structure in the opening.