| 摘要 |
A material to be deposited is fed to a surface of a nitride semiconductor substrate in a vacuum to thereby form a wire of the material having a width of 20 nm or smaller. Thus, a nanowire can be formed which is made of chromium (Cr), manganese (Mn), iron (Fe), cobalt (Co), nickel (Ni), rhodium (Rh), palladium (Pd), gold (Au), silver (Ag), indium (In), gallium (Ga), gadolinium (Gd), silicon (Si), germanium (Ge), gallium nitride (GaN), indium nitride (InN), etc. and has a wire width of 20 nm or smaller. |
