发明名称 METHOD FOR FORMING SILICON NITRIDE FILM, METHOD FOR PRODUCING GAS BARRIER FILM, AND GAS BARRIER FILM
摘要 <P>PROBLEM TO BE SOLVED: To provide a dense silicon nitride film having reduced Si-H bonds and having high gas barrier properties. Ž<P>SOLUTION: As raw material gas, silane gas and ammonia gas or nitrogen gas are used, and the effective power calculated by prescribed calculation formula is controlled to 10 to 100 W/sccm to the feed flow rate of the silane gas. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
申请公布号 JP2009235504(A) 申请公布日期 2009.10.15
申请号 JP20080084081 申请日期 2008.03.27
申请人 FUJIFILM CORP 发明人 FUJINAMI TATSUYA;ITO JIEI;TAKAHASHI TOSHIYA
分类号 C23C16/42;B32B9/04;H01L21/318 主分类号 C23C16/42
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