发明名称 |
METHOD FOR FORMING SILICON NITRIDE FILM, METHOD FOR PRODUCING GAS BARRIER FILM, AND GAS BARRIER FILM |
摘要 |
<P>PROBLEM TO BE SOLVED: To provide a dense silicon nitride film having reduced Si-H bonds and having high gas barrier properties. Ž<P>SOLUTION: As raw material gas, silane gas and ammonia gas or nitrogen gas are used, and the effective power calculated by prescribed calculation formula is controlled to 10 to 100 W/sccm to the feed flow rate of the silane gas. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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申请公布号 |
JP2009235504(A) |
申请公布日期 |
2009.10.15 |
申请号 |
JP20080084081 |
申请日期 |
2008.03.27 |
申请人 |
FUJIFILM CORP |
发明人 |
FUJINAMI TATSUYA;ITO JIEI;TAKAHASHI TOSHIYA |
分类号 |
C23C16/42;B32B9/04;H01L21/318 |
主分类号 |
C23C16/42 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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