| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a structure effective to a practical use which materializes a micro MOS transistor of a submicron region without impairing a characteristic of a high breakdown strength element in a dielectric isolating semiconductor device. Ž<P>SOLUTION: In this semiconductor device, a sidewall oxide film of a deep isolation trench formed on an active layer of an SOI substrate is formed extending on a surface of the active layer, whereby an absolute difference in level of polycrystal silicon for a gate is drastically reduced to enable a micro processing to be made. An electrode disposed in the vicinity of an element isolating trench is isolated from a surface of the silicon by an insulating film having a thickness of four times or more of that of the trench sidewall oxide film, thereby evading a dielectric breakdown of the high breakdown strength element. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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