发明名称 |
CARBON NANOTUBE MEMORY CELLS HAVING FLAT BOTTOM ELECTRODE CONTACT SURFACE |
摘要 |
The present invention is directed to structures and methods of fabricating nanotube electromechanical memory cells having a bottom electrode with a substantially planar contact surface. The bottom electrode is configured so that during the operation of the memory cell the nanotube crossbar of the cell can make contact with a substantially planar surface of the bottom electrode.
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申请公布号 |
US2009256217(A1) |
申请公布日期 |
2009.10.15 |
申请号 |
US20080102700 |
申请日期 |
2008.04.14 |
申请人 |
LSI LOGIC CORPORATION |
发明人 |
LU HONGQUIANG;BURKE PETER A.;CATABAY WILBUR |
分类号 |
H01L27/00;H01L21/02 |
主分类号 |
H01L27/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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