发明名称 CARBON NANOTUBE MEMORY CELLS HAVING FLAT BOTTOM ELECTRODE CONTACT SURFACE
摘要 The present invention is directed to structures and methods of fabricating nanotube electromechanical memory cells having a bottom electrode with a substantially planar contact surface. The bottom electrode is configured so that during the operation of the memory cell the nanotube crossbar of the cell can make contact with a substantially planar surface of the bottom electrode.
申请公布号 US2009256217(A1) 申请公布日期 2009.10.15
申请号 US20080102700 申请日期 2008.04.14
申请人 LSI LOGIC CORPORATION 发明人 LU HONGQUIANG;BURKE PETER A.;CATABAY WILBUR
分类号 H01L27/00;H01L21/02 主分类号 H01L27/00
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