发明名称 MAGNETIC DOMAIN PATTERNING USING PLASMA ION IMPLANTATION
摘要 A method for defining magnetic domains in a magnetic thin film on a substrate, includes: coating the magnetic thin film with a resist; patterning the resist, wherein areas of the magnetic thin film are substantially uncovered; and exposing the magnetic thin film to a plasma, wherein plasma ions penetrate the substantially uncovered areas of the magnetic thin film, rendering the substantially uncovered areas non- magnetic. A tool for this process comprises: a vacuum chamber held at earth potential; a gas inlet valve configured to leak controlled amounts of gas into the chamber; a disk mounting device configured to (1 ) fit within the chamber, (2) hold a multiplicity of disks, spacing the multiplicity of disks wherein both sides of each of the multiplicity of disks is exposed and (3) make electrical contact to the multiplicity of disks; and a radio frequency signal generator electrically coupled to the disk mounting device and the chamber, whereby a plasma can be ignited in the chamber and the disks are exposed to plasma ions uniformly on both sides. This process may be used to fabricate memory devices, including magnetoresistive random access memory devices.
申请公布号 WO2009102802(A3) 申请公布日期 2009.10.15
申请号 WO2009US33819 申请日期 2009.02.11
申请人 APPLIED MATERIALS, INC. 发明人 VERHAVERBEKE, STEVEN;FOAD, MAJEED, A.;KRISHNA, NETY, M.;NALAMASU, OMKARAM;VENKATESAN, MAHALINGAM;GIRIDHAR, KAMESH
分类号 G11B5/84;G11B5/39;G11C11/15;H01L27/105 主分类号 G11B5/84
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