| 摘要 |
PURPOSE: A method for controlling flatness of a wafer in a double side polishing process is provided to manufacture a wafer of high quality by again performing a double side polishing process for a short time in case measured flatness is less than a reference value. CONSTITUTION: A double side polishing process about a wafer is performed for a first polishing time(S120). Flatness of the polished wafer is measured by using a wafer flatness measuring device(S130). In case the measured flatness of the wafer is less than a reference value, the double side polishing process about the wafer is performed for a second polishing time shorter than the first polishing time(S160). In case the measured flatness of the wafer reaches to the reference value, the double side polishing process about the wafer is finished.
|
