| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a structure of a halftone phase shift mask and a method for manufacturing the mask, the halftone phase shift mask having a region comprising a phase shift layer and a region comprising a light shielding layer on the phase shift layer, in which a pattern having a large area but requiring no high accuracy such as a mask identification mark is formed in a short period of time without influencing the accuracy of other high accuracy pattern. <P>SOLUTION: The halftone phase shift mask has a structure where a pattern recognized by a difference in the reflectance depending on the presence or absence of a light shielding layer on a phase shift layer is used as an identification mark of the mask, and the mask is manufactured by the manufacturing method for simultaneously forming the identification mark with other patterns of the light shielding layers. <P>COPYRIGHT: (C)2010,JPO&INPIT</p> |
