| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method of manufacturing a light-emitting diode element easily manufacturable, excelling in energy utilization efficiency, and usable as a white light source. <P>SOLUTION: A first group III material gas containing a gallium compound or an aluminum compound, a group V material gas, and a second material gas containing an indium compound are supplied to a chamber in which a substrate 11 formed with a plurality of columnar nano-structures 13 on a surface is installed. Light having a wavelength larger than that of an absorption end wavelength of the second material gas is emitted. Accordingly, the second material gas containing the indium compound is decomposed based on near field light generated in accordance with the shapes of the columnar nano-structures 13, and a group III-V compound semiconductor layer 15 grows on the outer surfaces of the columnar nano-structures 13. The group III-V compound semiconductor layer 15 which is thereby obtained has an indium concentration distribution in accordance with the shapes of the columnar nano-structures 13. <P>COPYRIGHT: (C)2010,JPO&INPIT |
