| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor laser of wavelengths of 1.3 μm and 1.55 μm, that can make the difference in refractive indices between a clad layer and a core layer of a peripheral section large enough for forming a photonic band gap, and can lower the resistance of the clad layer in an active section. Ž<P>SOLUTION: The active section for generating light and a peripheral section as resonator for producing laser light from the generated light are formed on the same substrate, and the substrate 11 is an InP substrate. The active section has a clad layer 12 of a first conductivity type formed of AlInAs or AlGaInAs, a core layer 21 including an active layer formed of AlGaInAs or InGaAsP, and a clad layer 17 of a second conductivity type formed of AlInAs or AlGaInAs. The peripheral section has a first clad layer 22 formed by oxidizing the clad layer of the first conductivity type, a core layer 27, and a second clad layer 25 formed by oxidizing the clad layer of the second conductivity type. A two-dimensional photonic crystal defined by an array of regularly spaced apart holes 26 is formed in the peripheral section. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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