发明名称 |
TWO BIT U-SHAPED MEMORY STRUCTURE AND METHOD OF MAKING THE SAME |
摘要 |
A memory structure includes: a substrate; a control gate positioned on the substrate; floating gates positioned at two sides of the control gate, wherein the floating gates have a U-shaped bottom embedded in the substrate; a first dielectric layer positioned between the control gate and the substrate; a second dielectric layer positioned between the U-shaped bottom of the floating gates and the substrate; a third dielectric layer positioned between the control gate and the floating gates; a local doping region positioned around the floating gates channel; and a source/drain doping region positioned in the substrate at a side of the floating gates.
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申请公布号 |
US2009256189(A1) |
申请公布日期 |
2009.10.15 |
申请号 |
US20080139499 |
申请日期 |
2008.06.15 |
申请人 |
LIAO WEI-MING;WANG JER-CHYI |
发明人 |
LIAO WEI-MING;WANG JER-CHYI |
分类号 |
H01L29/788;H01L21/336 |
主分类号 |
H01L29/788 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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