发明名称 |
METHOD OF FORMING MASK FOR LITHOGRAPHY, METHOD OF FORMING MASK DATA FOR LITHOGRAPHY, METHOD OF MANUFACTURING BACK-ILLUMINATED SOLID-STATE IMAGING DEVICE, BACK-ILLUMINATED SOLID-STATE IMAGING DEVICE AND ELECTRONIC DEVICE |
摘要 |
<P>PROBLEM TO BE SOLVED: To handle a back-illuminated type without distinguishing it from a front-illuminated type. <P>SOLUTION: Design data (A) of a chip of a back-illuminated CMOS image sensor is designed in the same manner as the front-illuminated type by using an IP of a normal CMOS process without considering mirror reversal of a taken image (C) by back illumination. An I/O drawing (B) which is a terminal drawing and a signal drawing are also formed as they are without considering mirror reversal of the taken image (C). Then, after the layout data of the whole chip is made, the layout data (A) is mirror-reversed in the whole chip before being transcribed to a mask for photolithography for manufacture and reverse mask data (E) is formed anew. Then, the mask is formed by using the reverse mask data (E) and the back-illuminated CMOS image sensor is formed by using the formed mask. <P>COPYRIGHT: (C)2010,JPO&INPIT |
申请公布号 |
JP2009238819(A) |
申请公布日期 |
2009.10.15 |
申请号 |
JP20080080008 |
申请日期 |
2008.03.26 |
申请人 |
SONY CORP |
发明人 |
MABUCHI KEIJI |
分类号 |
H01L27/146;G03F1/68;H04N5/335;H04N5/341;H04N5/353;H04N5/369;H04N5/374 |
主分类号 |
H01L27/146 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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