| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To solve a problem in a conventional semiconductor device wherein, thermal stress generated by the difference of a linear expansion coefficient of a material around a bump electrode is imposed on the bump electrode, and a crack easily occurs in the bump electrode. <P>SOLUTION: In the semiconductor device, an opening region 16 is formed on a resin layer 15, and a bump electrode 2 is formed in the opening region 16. A projecting region of a Cu plated layer 14 covering a projecting part 10 is formed in the opening region 16. The bump electrode 2 is connected to the projecting region of the Cu plated layer 14. By this structure, the projecting part 10 is used as a core material of the bump electrode 2, and relaxes thermal stress applied to the bump electrode 2. The projecting region of the Cu plated layer 14 increases joint force between the bump electrode 2 and a wiring layer 12, and reduces the resistance value in the bump electrode 2. <P>COPYRIGHT: (C)2010,JPO&INPIT</p> |
