| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a method of surely and selectively forming an impurity diffusion region without needing a complicated process, and manufacturing an electrode including such an impurity diffusing agent layer. <P>SOLUTION: This electrode manufacturing method includes processes of: forming an impurity diffusing agent layer on a semiconductor substrate; selectively heating the impurity diffusing agent layer by using a laser to diffuse an impurity diffusing agent in the heated part into the semiconductor substrate; and removing the impurity diffusing agent layer. The impurity diffusing agent contains a compound of a group III element or a compound of a group V element. <P>COPYRIGHT: (C)2010,JPO&INPIT</p> |
