| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To improve reliability of a semiconductor device of a BGA type package having a NSMD type land structure. <P>SOLUTION: The semiconductor device includes a semiconductor chip arranged on a front surface of a wiring board WB, and includes a wiring MW, a land portion ML at an edge of the wiring MW, a solder resist SR, a ball electrode EB and a protective resin PR arranged on a rear surface s2 of the wiring board WB. The semiconductor chip is electrically connected to the wiring MW. The solder resist SR is so formed as to cover the wiring MW in the rear surface s2 of the wiring board WB. The solder resist SR has a NSMD type opening portion OF over the land portion ML. The ball electrode EB is so formed as to be electrically connected to the land portion ML. The protective resin PR is so formed as to fill in the opening portion OF of the solder resist SR containing a contact portion between the ball electrode EB and the land portion ML. The protective resin PR is a thermosetting resin containing an organic acid, a solvent and a curing agent. <P>COPYRIGHT: (C)2010,JPO&INPIT</p> |
