| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a magnetic memory cell which has low power consumption and high storage density by moving a magnetic domain wall in a magnetic layer with a small current through spin orbit interaction and performing ratchet driving. <P>SOLUTION: The magnetic memory cell 1 has a first magnetic layer 10 whose magnetization state is fixed as a reference layer, a second magnetic layer 30 whose magnetization state changes as a data storage layer, and a tunneling barrier layer 20 sandwiched between the first magnetic layer 10 and second magnetic layer 30. In the magnetic memory cell 1, spin orbit interaction of the second magnetic layer 30 is controlled when the magnetization state of the second magnetic layer 30 is changed. <P>COPYRIGHT: (C)2010,JPO&INPIT</p> |
