| 摘要 |
A memory system includes: a memory array, comprising a plurality of memory banks, respectively enabled by a plurality of bank enable signals; a bank selector circuit, for generating the plurality of bank enable signals; a plurality of charge pump components, coupled between the plurality of memory banks and the bank selector circuit, and respectively enabled by the plurality of bank enable signals; and a charge pump circuit, coupled to the plurality of charge pump components, for regulating a supply voltage required by the memory system.
|
