| 摘要 |
A semiconductor device is configured that a high-withstand voltage semiconductor device and logic circuits are integrated on a single chip and that a high-withstand voltage high-potential island including the high-potential-side logic circuit is separated using multiple partition walls enclosing therearound. The semiconductor device is provided with a multi-trench separation region having a level shift wire region that is used to connect the high-potential-side logic circuit to the high-potential-side electrode of the high-withstand voltage semiconductor device.
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