发明名称 |
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME |
摘要 |
A method for manufacturing a semiconductor device is provided. A gate structure is formed on a substrate. A first dopant implantation and a first strain atom implantation are performed. Thereafter, spacers are formed on sidewalls of the gate structure. A second dopant implantation and a second strain atom implantation are performed. A solid-phase epitaxy annealing process is performed to form source and drain regions made of a semiconductor compound solid-phase epitaxial layer beside the gate structure.
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申请公布号 |
US2009256160(A1) |
申请公布日期 |
2009.10.15 |
申请号 |
US20080101725 |
申请日期 |
2008.04.11 |
申请人 |
UNITED MICROELECTRONICS CORP. |
发明人 |
LIU PO-WEI;TSAI CHENG-TZUNG;CHIANG WEN-TAI |
分类号 |
H01L29/78;H01L21/336 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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