SURFACE TREATMENT IN SEMICONDUCTOR MANUFACTURING

摘要

The present invention provides a process for forming a capping layer on a conducting interconnect for a semiconductor device, the process comprising: (a) providing a substrate comprising one or more conductors in a dielectric layer, the conductors having an oxide layer at their surface; (b) exposing the surface of the substrate to a vapour of /3-diketone or a ß- ketoimine; and (c) depositing a capping layer on the surface of at least some of the one or more conductors. The present invention further provides an apparatus for carrying out this method.