BIASED PLASMA ASSISTED PROCESSING

摘要

The present invention provides a method for use in a plasma-assisted physical vapour deposition and/or other plasma processing system, in which low or medium frequency power is applied to at least two electrodes at different individual frequencies and with a defined relationship between them. The invention also provides an enhanced process created by the abovementioned method, which is also simple, reliable and straightforward, to scale up. One embodiment includes a plasma-assisted physical vapour deposition system that employs a target and a substrate being processed. The low or medium frequency voltage or current waveforms are applied to the target and the substrate at different frequencies by power supplies (or a supply) that are (is) constructed and configured to output signals of different frequencies with a defined desirable relationship between them, desirable synchronisation and desirable adjustable mismatch between them.