| 摘要 |
PROBLEM TO BE SOLVED: To provide a sputtering apparatus which can suitably and easily suppress the aggregation of a target material produced upon the sputtering of a target without reducing the film deposition rate of a sputtered film. SOLUTION: The sputtering apparatus 100 includes: a vacuum film deposition chamber 30 storing a substrate 34B and the target 35B; a plasma gun 40 having a cathode unit 41, and capable of forming plasma 27 at the inside of the vacuum deposition chamber 30 by discharge between the cathode unit 41 and an anode A; a plasma gun source 50 feeding electric power to the plasma gun 40; and a bias source 52 applying bias voltage to the target 35B. The discharge current ID of the plasma is regulated using the plasma gun source 50, and also, bias voltage VB is regulated using the bias source 52 in such a manner that the material of the target 35B sputtered by the charged particles in the plasma 27 is not aggregated in the substrate 34B. COPYRIGHT: (C)2010,JPO&INPIT
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